Systematic investigation of silylation materials for recovery use of low-kmaterial plasma damage-Reference-Cited by-同舟云学术

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Systematic investigation of silylation materials for recovery use of low-kmaterial plasma damage

Published:2015-06-08 Issue:7 Volume:54 Page:071502
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Imada Tadahiro,Nakata Yoshihiro,Ozaki Shiro,Kobayashi Yasushi,Nakamura Tomoji

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/54/i=7/a=071502/pdf

Reference25 articles.

1. Low dielectric constant materials for microelectronics

2. Plasma damage mechanisms for low-k porous SiOCH films due to radiation, radicals, and ions in the plasma etching process

3. Analysis of water adsorption in plasma-damaged porous low-k dielectric by controlled-atmosphere infrared spectroscopy

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