Growth of ZnTe epilayers onr- andn-plane sapphire substrates-Reference-Cited by-同舟云学术

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Growth of ZnTe epilayers onr- andn-plane sapphire substrates

Published:2015-06-05 Issue:7 Volume:54 Page:075501
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Nakasu Taizo,Aiba Takayuki,Yamashita Sotaro,Hattori Shota,Kizu Takeru,Sun Wei-Che,Taguri Kosuke,Kazami Fukino,Kobayashi Masakazu

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/54/i=7/a=075501/pdf

Reference32 articles.

1. Measurement of Interface-Induced Optical Anisotropies of a Semiconductor Heterostructure: ZnSe/GaAs(100)

2. Direct growth of high-quality CdTe epilayers on Si(211) substrates by metalorganic vapor-phase epitaxy

3. Characterization of MBE grown ZnO on GaAs(111) substrates

4. High temperature growth of ZnS and ZnMgS by molecular beam epitaxy under high sulfur beam pressure

5. Zinc oxide thin films synthesized by metal organic chemical reactions

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Large-area single-crystal TMD growth modulated by sapphire substrates;Nanoscale;2024

2. Anisotropic Analysis of Etch Rates for Sapphire Based on a Layer-by-Layer Removal Model of Surface Atoms;Processes;2023-04-21

3. On the anion and cation positions within and nearby R(101¯2)$R(10\overline{1}2)$, Σ(202¯4)$\mathrm{\Sigma}(20\overline{2}4)$, and Π(101¯4)$\mathrm{\Pi}(10\overline{1}4)$ planes of α‐Al ₂ O ₃ corundum structure;Journal of the American Ceramic Society;2022-11-09

4. Control of the Nucleation Layers of (110)-Oriented ZnTe Thin Film Growth on r-Plane and S-Plane Sapphire Nanofaceted Substrates;Journal of Electronic Materials;2022-03-03

5. Application of the evolutionary kinetic Monte Carlo method for the simulation of anisotropic wet etching of sapphire;Journal of Micromechanics and Microengineering;2021-04-27

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