Characterization of MBE grown ZnO on GaAs(111) substrates
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Reference5 articles.
1. Plasma assisted molecular beam epitaxy of ZnO on c -plane sapphire: Growth and characterization
2. Uniaxial locked growth of high-quality epitaxial ZnO films on -Al2O3
3. MBE growth and optical properties of ZnO on GaAs(111) substrates
4. p-Type doping of ZnSe with a novel nitrogen exciter
5. Epitaxial Growth and Polarity of ZnO Films on Sapphire (0001) Substrates by Low-Pressure Metal Organic Chemical Vapor Deposition
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1. Growth of ZnTe epilayers onr- andn-plane sapphire substrates;Japanese Journal of Applied Physics;2015-06-05
2. Heteroepitaxial Growth of ZnO Nanorod Arrays on GaAs (111) Substrates by Electrochemical Deposition;European Journal of Inorganic Chemistry;2010-08-18
3. XRD characterization of ZnO layers grown on GaAs(111)B, c-plane and a-plane sapphire substrates by plasma-assisted MBE;physica status solidi (c);2010-03-23
4. Structural and optical properties of polar and non-polar ZnO films grown by MOVPE;Journal of Crystal Growth;2008-11
5. Growth and structural properties of m-plane ZnO on MgO (001) by molecular beam epitaxy;Applied Physics Letters;2008-06-09
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