Reducing forward bias voltage of InGaN/GaN-based light emitting diodes by using (In)GaN contact layer-Reference-Cited by-同舟云学术

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Reducing forward bias voltage of InGaN/GaN-based light emitting diodes by using (In)GaN contact layer

Published:2015-05-26 Issue:6 Volume:54 Page:062102
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kang Daesung,Han Younghun,Kang Donghun,Kyoung Hyunai,Jeong Hwanhee,Song June-O,Kim Dae-Hyun,Seong Tae-Yeon

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/54/i=6/a=062102/pdf

Reference28 articles.

1. Ohmic-Contact Technology for GaN-Based Light-Emitting Diodes: Role of P-Type Contact

2. Schottky barriers and contact resistances onp‐type GaN

3. Effects of strained InGaN interlayer on contact resistance between p-GaN and indium tin oxide

4. Effect of thermal annealing of Ni/Au ohmic contact on the leakage current of GaN based light emitting diodes

5. Formation of low resistance Pt ohmic contacts to p-type GaN using two-step surface treatment

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Realization of p-GaN ohmic contact by using a strained p-AlInGaN interlayer and its application in UVA LEDs;Japanese Journal of Applied Physics;2019-06-01

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