Growth and characterization of high quality AlN using combined structure of low temperature buffer and superlattices for applications in the deep ultraviolet-Reference-Cited by-同舟云学术

Growth and characterization of high quality AlN using combined structure of low temperature buffer and superlattices for applications in the deep ultraviolet

Published:2015-07-27 Issue:8 Volume:54 Page:081001
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kim Jinwan,Pyeon Jaedo,Jeon Minhwan,Nam Okhyun

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/54/i=8/a=081001/pdf

Reference18 articles.

1. Growth and laser-assisted liftoff of low dislocation density AlN thin films for deep-UV light-emitting diodes

2. Fabrication of AlN Nano-Structures Using Polarity Control by High Temperature Metalorganic Chemical Vapor Deposition

3. Characterization of a-plane GaN layers grown on patterned r-sapphire substrate by metal organic chemical vapor deposition

4. Epitaxial lateral overgrowth of AlN on trench-patterned AlN layers

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