Theoretical analysis on polarization-induced resistance switching effects of polymer thin films including dead layers
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/54/i=10S/a=10NA08/pdf
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1. Solid-state memories based on ferroelectric tunnel junctions
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3. Ferroelectric tunnel junctions for information storage and processing
4. An Epitaxial Ferroelectric Tunnel Junction on Silicon
5. Polarization induced resistance switching effect in ferroelectric vinylidene-fluoride/trifluoroethylene copolymer ultrathin films
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3. Polarization-induced resistance switching phenomenon in metal Au/ferroelectric vinylidene fluoride–trifluoroethylene/semiconductor Si junction;Japanese Journal of Applied Physics;2017-09-22
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