Polarization-induced resistance switching phenomenon in metal Au/ferroelectric vinylidene fluoride–trifluoroethylene/semiconductor Si junction
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/56/i=10S/a=10PF13/pdf
Reference37 articles.
1. Tunneling Across a Ferroelectric
2. Giant tunnel electroresistance for non-destructive readout of ferroelectric states
3. Polarization Control of Electron Tunneling into Ferroelectric Surfaces
4. Tunneling Electroresistance Effect in Ferroelectric Tunnel Junctions at the Nanoscale
5. Ferroelectric and multiferroic tunnel junctions
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Giant tunneling electroresistance arising from reversible partial barrier metallization in the NaTiO3/BaTiO3/LaTiO3 ferroelectric tunnel junction;Physical Chemistry Chemical Physics;2021
2. Direct piezoelectric response in vinylidene fluoride–trifluoroethylene copolymer films;Japanese Journal of Applied Physics;2018-09-13
3. Erratum: “Polarization-induced resistance switching phenomenon in metal Au/ferroelectric vinylidene fluoride–trifluoroethylene/semiconductor Si junction”;Japanese Journal of Applied Physics;2017-11-07
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