Gate oxide reliability on trapezoid-shaped defects and obtuse triangular defects in 4H-SiC epitaxial wafers-Reference-Cited by-同舟云学术

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Gate oxide reliability on trapezoid-shaped defects and obtuse triangular defects in 4H-SiC epitaxial wafers

Published:2014-01-01 Issue:4S Volume:53 Page:04EP15
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Ishiyama Osamu,Yamada Keiichi,Sako Hideki,Tamura Kentaro,Kitabatake Makoto,Senzaki Junji,Matsuhata Hirofumi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference32 articles.

1. Correlation between reliability of thermal oxides and dislocations in n-type 4H-SiC epitaxial wafers

2. Time-Dependent Dielectric Breakdown of 4H-SiC MOS Capacitors and DMOSFETs

3. Evaluation of 4H-SiC Thermal Oxide Reliability Using Area-Scaling Method

4. Correlation between Thermal Oxide Breakdown and Defects in n-Type 4H-SiC Epitaxial Wafers

5. Influence of Processing and of Material Defects on the Electrical Characteristics of SiC-SBDs and SiC-MOSFETs

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1. Accurate screening of defective oxide on SiC using consecutive multiple threshold-voltage measurements;2022 IEEE International Reliability Physics Symposium (IRPS);2022-03

2. High-radiation Hardness 4H-SiC Transimpedance Amplifier featuring Stable Offset-voltage for Analog Sensors in Nuclear Power Plants;2020 IEEE International Electron Devices Meeting (IEDM);2020-12-12

3. Nanoscale Insights on the Origin of the Power MOSFETs Breakdown after Extremely Long High Temperature Reverse Bias Stress;Materials Science Forum;2020-07

4. Effect of growth rate on morphology evolution of 4H-SiC thick homoepitaxial layers;Journal of Crystal Growth;2019-02

5. Characteristics and Mechanism of Catalyst-Referred Etching Method: Application to 4H-SiC;International Journal of Automation Technology;2018-03-01

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