Subthreshold behavior models for nanoscale junctionless double-gate MOSFETs with dual-material gate stack
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/53/i=8/a=084201/pdf
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1. Multiple-gate SOI MOSFETs
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5. Explicit Compact Surface-Potential and Drain-Current Models for Generic Asymmetric Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors
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