A Novel Approach to Model Threshold Voltage and Subthreshold Current of Graded-Doped Junctionless-Gate-All-Around (GD-JL-GAA) MOSFETs
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
http://link.springer.com/content/pdf/10.1007/s12633-021-01084-6.pdf
Reference29 articles.
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