Dimensional Effect on Analog/RF Performance of Dual Material Gate Junctionless FinFET at 7 nm Technology Node
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s42341-023-00440-0.pdf
Reference42 articles.
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2. J.P. Duarte, S.J. Choi, M.D.Y.K. IlChoi, Simple analytical bulk current model for long-channel double-gate junctionless transistors. IEEE Electron Device Lett. 32, 704–706 (2011). https://doi.org/10.1109/LED.2011.2127441
3. J.M. Sallese, N. Chevillon, C. Lallement et al., Charge-based modeling of junctionless double-gate field-effect transistors. IEEE Trans. Electron Devices 58, 2628–2637 (2011). https://doi.org/10.1109/TED.2011.2156413
4. C. Zhang, W. Choi, P. Mohseni, X. Li, InAs nanowire gate-all-around MOSFETs by heterogeneous planar VLS growth. InAs nanowire gate-all-around MOSFETs by heterogeneous planar VLS growth (2015)
5. R. Kusuma, V.H.R. Talari (2021) Performance analysis of FinFET using gate stack and workfunction engineering in 14nm technology. In: 2021 2nd International conference for emerging technology (INCET), Belagavi, India, pp 1–4. https://doi.org/10.1109/INCET51464.2021.9456268
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