Depth profiles of the nickel donor center in p-type silicon diffused with dilute nickel measured by deep-level transient spectroscopy
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/53/i=9/a=091301/pdf
Reference37 articles.
1. Behavior of Defects Induced by Metallic Impurities on Si(100) Surfaces
2. Metal Impurities in Silicon-Device Fabrication
3. THE SOLID SOLUBILITY OF NICKEL IN SILICON DETERMINED BY NEUTRON ACTIVATION ANALYSIS
4. Properties of Silicon Doped with Nickel
5. Dissociative Diffusion of Nickel in Silicon and Self-Diffusion of Silicon
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1. Origins of the nitrogen-related deep donor center and its preceding species in nitrogen-doped silicon determined by deep-level transient spectroscopy;Applied Physics Express;2019-02-01
2. Electrical Properties of Metals in Si and Ge;Metal Impurities in Silicon- and Germanium-Based Technologies;2018
3. Metallic Contaminants on Surfaces and Their Impact;Developments in Surface Contamination and Cleaning: Types of Contamination and Contamination Resources;2017
4. Transformation of the nickel donor center by annealing in silicon measured by deep-level transient spectroscopy;Japanese Journal of Applied Physics;2015-12-10
5. Defect Formation of Nickel-Incorporated Large-Diameter Czochralski-Grown Silicon and Their Effect on Gate Oxide Reliability;ECS Journal of Solid State Science and Technology;2015-10-05
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