Experimental study of three-dimensional fin-channel charge trapping flash memories with titanium nitride and polycrystalline silicon gates-Reference-Cited by-同舟云学术

Experimental study of three-dimensional fin-channel charge trapping flash memories with titanium nitride and polycrystalline silicon gates

Published:2014-01-01 Issue:4S Volume:53 Page:04ED16
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Liu Yongxun,Matsukawa Takashi,Endo Kazuhiko,O’uchi Shinichi,Tsukada Junichi,Yamauchi Hiromi,Ishikawa Yuki,Mizubayashi Wataru,Morita Yukinori,Migita Shinji,Ota Hiroyuki,Masahara Meishoku

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

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5. Fin-Type Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated by Orientation-Dependent Etching and Electron Beam Lithography

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