Understanding the Memory Window Overestimation of 2D Materials Based Floating Gate Type Memory Devices by Measuring Floating Gate Voltage-Reference-Cited by-同舟云学术

Understanding the Memory Window Overestimation of 2D Materials Based Floating Gate Type Memory Devices by Measuring Floating Gate Voltage

Author:

Sasaki Taro¹,Ueno Keiji²,Taniguchi Takashi³,Watanabe Kenji⁴,Nishimura Tomonori¹,Nagashio Kosuke¹^ORCID

Affiliation:

1. Department of Materials Engineering The University of Tokyo Tokyo 113‐8656 Japan

2. Department of Chemistry Saitama University Saitama 338‐8570 Japan

3. International Center for Materials Nanoarchitectonics National Institute for Materials Science Ibaraki 305‐0044 Japan

4. Research Center for Functional Materials National Institute for Materials Science Ibaraki 305‐0044 Japan

Funder

Ministry of Education, Culture, Sports, Science and Technology

Core Research for Evolutional Science and Technology

Japan Science and Technology Agency

Japan Society for the Promotion of Science

Publisher

Wiley

Subject

Biomaterials,Biotechnology,General Materials Science,General Chemistry

Link

Reference34 articles.

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