Elimination of defects in In–Mg codoped GaN layers probed by strain analysis-Reference-Cited by-同舟云学术

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Elimination of defects in In–Mg codoped GaN layers probed by strain analysis

Published:2014-04-30 Issue:6 Volume:53 Page:060301
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Fu Binglei,Liu Zhe,Liu Naixin,Li Zhi,Si Zhao,Wei Xuecheng,Sun Baojuan,Ma Ping,Wei Tongbo,Li Jinmin,Wang Junxi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/53/i=6/a=060301/pdf

Reference28 articles.

1. Heavy doping effects in Mg-doped GaN

2. Self-compensation in Mg doped p-type GaN grown by MOCVD

3. Isoelectronic In-doping effect in GaN films grown by metalorganic chemical vapor deposition

4. Electrical characterization of isoelectronic In-doping effects in GaN films grown by metalorganic vapor phase epitaxy

5. Control of strain in GaN using an In doping-induced hardening effect

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of Al doping on dislocation inclinations and strain of GaN films on Si substrates;AIP Advances;2023-02-01

2. Identifying threading dislocation types in ammonothermally grown bulk α-GaN by confocal Raman 3-D imaging of volumetric stress distribution;Journal of Crystal Growth;2018-10

3. Investigation of Isoelectronic Doping in p-GaN Based on the Thermal Quenching of UVL Band;IEEE Photonics Journal;2016-10

4. Analysis of Photoluminescence Thermal Quenching: Guidance for the Design of Highly Effective p-type Doping of Nitrides;Scientific Reports;2016-08

5. Co-doping of magnesium with indium in nitrides: first principle calculation and experiment;RSC Advances;2016

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