Control of strain in GaN using an In doping-induced hardening effect
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.64.035318/fulltext
Reference22 articles.
1. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
2. Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy
3. Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaN
4. Stress and Defect Control in GaN Using Low Temperature Interlayers
5. Isoelectronic In-doping effect in GaN films grown by metalorganic chemical vapor deposition
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