Surface properties of ZrO2thin film under Cl2/Ar plasma using angle-resolved X-ray photoelectron spectroscopy-Reference-Cited by-同舟云学术

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Surface properties of ZrO2thin film under Cl2/Ar plasma using angle-resolved X-ray photoelectron spectroscopy

Published:2014-07-24 Issue:8S3 Volume:53 Page:08NB05
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Woo Jong-Chang,Choi Chang-Auck,Yang Woo-Seok,Chun Yoon-Soo,Kim Chang-Il

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/53/i=8S3/a=08NB05/pdf

Reference31 articles.

1. Selective etching of high-k HfO2 films over Si in hydrogen-added fluorocarbon (CF4∕Ar∕H2 and C4F8∕Ar∕H2) plasmas

2. Reverse-Conducting IGBT Using MEMS Technology on the Wafer Back Side

3. Preliminary Works of Contact via Formation of LCD Backplanes Using Silver Printing

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. BCl3/Cl2 plasma etching process to fabricate a ferroelectric gate structure for device integration;Solid-State Electronics;2024-06

2. Etch Mechanism of AlN Thin Film in Cl2/Ar Inductively Coupled Plasma;Transactions on Electrical and Electronic Materials;2022-08-04

3. Chemistry of surface nanostructures in lead precursor-rich PbZr0.52Ti0.48O3 sol–gel films;Applied Surface Science;2016-02

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