Evaluation of off-bias-stress induced surface charging at AlGaN/GaN surface using a dual-gate transistor structure
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/53/i=7/a=070301/pdf
Reference26 articles.
1. GaN-Based RF Power Devices and Amplifiers
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3. GaN on Si Technologies for Power Switching Devices
4. Fabrication and Performance of Au-Free AlGaN/GaN-on-Silicon Power Devices With ${\rm Al}_{2}{\rm O}_{3}$ and ${\rm Si}_{3}{\rm N}_{4}/{\rm Al}_{2}{\rm O}_{3}$ Gate Dielectrics
5. 600 V GaN HEMT on 6-inch Si substrate using Au-free Si-LSI process for power applications
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1. Investigation of trapping/de-trapping dynamics of surface states in AlGaN/GaN high-electron mobility transistors based on dual-gate structures;Microelectronic Engineering;2023-01
2. Controlling surface/interface states in GaN-based transistors: Surface model, insulated gate, and surface passivation;Journal of Applied Physics;2021-03-28
3. Study of Current Collapse Behaviors of D ual gate AlGaN/GaN HEMTs on Si;IEEE Journal of the Electron Devices Society;2021
4. Improved DC performance and current stability of ultrathin-Al2O3/InAlN/GaN MOS-HEMTs with post-metallization-annealing process;Semiconductor Science and Technology;2020-02-25
5. On the presence of Ga2O sub-oxide in high-pressure water vapor annealed AlGaN surface by combined XPS and first-principles methods;Applied Surface Science;2019-07
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