Analyzing charge distribution in the termination area of 4H-SiC diodes by measuring depletion-layer capacitance
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/55/i=4S/a=04ER17/pdf
Reference30 articles.
1. Optimum semiconductors for high-power electronics
2. Comparison of 6H-SiC, 3C-SiC, and Si for power devices
3. Material science and device physics in SiC technology for high-voltage power devices
4. Time-dependent-dielectric-breakdown measurements of thermal oxides on n-type 6H-SiC
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1. High-Voltage Temperature Humidity Bias Test (HV-THB): Overview of Current Test Methodologies and Reliability Performances;Electronics;2020-11-09
2. Dependence of humidity-stress impact on passivation film for edge termination area in 4H-SiC diodes;Japanese Journal of Applied Physics;2020-09-25
3. Two Mechanisms of Charge Accumulation in Edge Termination of 4H-SiC Diodes Caused by High-Temperature Bias Stress and High-Temperature and High-Humidity Bias Stress;IEEE Transactions on Electron Devices;2018-08
4. Impact of High-Temperature Storage Stressing (HTSS) on Degradation of High-Voltage 4H-SiC Junction Barrier Schottky Diodes;IEEE Transactions on Power Electronics;2018-03
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