High-Voltage Temperature Humidity Bias Test (HV-THB): Overview of Current Test Methodologies and Reliability Performances

Author:

Cimmino DavideORCID,Ferrero Sergio

Abstract

The high voltage temperature humidity bias test (HV-THB) has become increasingly popular for evaluating the performances of power semiconductor devices. Given the new challenges of the power semiconductor industry, several applications and devices need to be designed to withstand harsh environments during working operations, with a remarkable focus on high-humidity conditions. The HV-THB test allows one to activate and study different failure mechanisms which were not highlighted by the standard low voltage THB test, enabling new designs in several energy conversion fields, such as energy harvesting, industry and automotive applications. After a brief introduction of current test standards, this work goes through the current methodologies and state-of-the-art of the HV-THB test. The following sections are then dedicated to the knowledge about the failure mechanisms and the models for accelerated testing. Eventually, there is a section devoted to the main passivation materials in order to understand their effects on the HV-THB capabilities of the devices.

Publisher

MDPI AG

Subject

Electrical and Electronic Engineering,Computer Networks and Communications,Hardware and Architecture,Signal Processing,Control and Systems Engineering

Reference69 articles.

1. The future of power systems: Challenges, trends, and upcoming paradigms

2. Semiconductor Power Devices;Lutz,2018

3. High Humidity Robustness of ABB’s IGBTs and Diodeshttps://search.abb.com/library/Download.aspx?DocumentID=bp-05-2017&LanguageCode=en&DocumentPartId=&Action=Launch

Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Surface Charge Migration in SiC Power MOSFETs Induced by HVDC-H3TRB Testing;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

2. SiC IGBT degradation mechanism investigation under HV-H3TRB tests;Journal of Power Electronics;2023-12-15

3. Understanding Silent Data Corruptions in a Large Production CPU Population;Proceedings of the 29th Symposium on Operating Systems Principles;2023-10-23

4. Effect of pre-adsorbed moisture and humidity on I–V characteristics of Si PIN diode;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2023-02

5. Influence of Humidity on the Power Cycling Lifetime of SiC MOSFETs;IEEE Transactions on Components, Packaging and Manufacturing Technology;2022-11

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3