Threshold-voltage bias-temperature instability in commercially-available SiC MOSFETs
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/55/i=4S/a=04EA03/pdf
Reference35 articles.
1. Bias Stress-Induced Threshold-Voltage Instability of SiC MOSFETs
2. Basic Mechanisms of Threshold-Voltage Instability and Implications for Reliability Testing of SiC MOSFETs
3. Characterization of Transient Gate Oxide Trapping in SiC MOSFETs Using Fast $I$–$V$ Techniques
4. Bias-stress induced threshold voltage and drain current instability in 4H–SiC DMOSFETs
5. Temperature and Time Dependent Threshold Voltage Instability in 4H-SiC Power DMOSFET Devices
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