Solution-processed Al2O3gate dielectrics for graphene field-effect transistors-Reference-Cited by-同舟云学术

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Solution-processed Al2O3gate dielectrics for graphene field-effect transistors

Published:2016-08-26 Issue:9 Volume:55 Page:091502
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Park Goon-Ho,Kim Kwan-Soo,Fukidome Hirokazu,Suemitsu Tetsuya,Otsuji Taiichi,Cho Won-Ju,Suemitsu Maki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/55/i=9/a=091502/pdf

Reference32 articles.

1. The physics of SiO2layers

2. Electric Field Effect in Atomically Thin Carbon Films

3. Ultrahigh electron mobility in suspended graphene

4. Graphene transistors

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1. Process Yield and Device Stability in Sol-Gel Alumina Passivation Layer-Based GFETs;IEEE Transactions on Electron Devices;2023-09

2. Seed layer engineering for crack-free sol–gel Alumina deposition on GFETs;Materials Science in Semiconductor Processing;2023-05

3. Growth of wafer-scale graphene–hexagonal boron nitride vertical heterostructures with clear interfaces for obtaining atomically thin electrical analogs;Nanoscale;2022

4. Graphene Field-Effect Transistors Employing Different Thin Oxide Films: A Comparative Study;ACS Omega;2019-01-29

5. Flexible and transparent graphene complementary logic gates;Molecular Systems Design & Engineering;2019

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