Growth of wafer-scale graphene–hexagonal boron nitride vertical heterostructures with clear interfaces for obtaining atomically thin electrical analogs-Reference-Cited by-同舟云学术

Growth of wafer-scale graphene–hexagonal boron nitride vertical heterostructures with clear interfaces for obtaining atomically thin electrical analogs

Published:2022 Issue:11 Volume:14 Page:4204-4215
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Yang Huihui¹²,Wang Gang³,Guo Yanming⁴,Wang Lifeng⁵,Tan Biying²,Zhang Shichao²,Zhang Xin²,Zhang Jia²^ORCID,Shuai Yong⁴^ORCID,Lin Junhao³^ORCID,Jia Dechang¹,Hu PingAn¹²^ORCID

Affiliation:

1. Institute for Advanced Ceramics, School of Materials Science and Engineering, Harbin Institute of Technology, Heilongjiang, Harbin, 150080, P. R. China

2. Key Laboratory of Micro-Systems and Micro-Structures Manufacturing of Ministry of Education, Harbin Institute of Technology, Harbin 150080, P. R. China

3. Department of Physics, Southern University of Science and Technology, Shenzhen 518055, P. R. China

4. School of Energy Science and Engineering, Harbin Institute of Technology, Harbin 150080, P. R. China

5. Institute for Frontier Materials, Deakin University, Waurn Ponds, Australia

Abstract

Wafer-scale vertical hexagonal boron nitride/graphene heterostructures with clear interfaces are realized via a two-step metallic alloy assisted epitaxial growth method.

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

State Key Laboratory of Robotics and System

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2022/NR/D1NR06004J

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1. High-speed graphene transistors with a self-aligned nanowire gate