Graphene Field-Effect Transistors Employing Different Thin Oxide Films: A Comparative Study-Reference-Cited by-同舟云学术

Graphene Field-Effect Transistors Employing Different Thin Oxide Films: A Comparative Study

Published:2019-01-29 Issue:1 Volume:4 Page:2256-2260
ISSN:2470-1343
Container-title:ACS Omega
language:en
Short-container-title:ACS Omega

Author:

Giambra Marco A.^ORCID,Benfante Antonio,Pernice Riccardo,Miseikis Vaidotas¹²^ORCID,Fabbri Filippo¹²,Reitz Christian³,Pernice Wolfram H. P.³⁴^ORCID,Krupke Ralph³⁵,Calandra Enrico,Stivala Salvatore,Busacca Alessandro C.,Danneau Romain³

Affiliation:

1. Graphene Labs, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy

2. CNI@NEST, Istituto Italiano di Tecnologia, Piazza San Silvestro 12, 56127 Pisa, Italy

3. Institute of Nanotechnology, Karlsruhe Institute of Technology, 76021 Karlsruhe, Germany

4. Institute of Physics, University of Münster, Münster 48149, Germany

5. Institute of Materials Science, Technische Universität Darmstadt, 64287 Darmstadt, Germany

Funder

Ministero dell?Istruzione, dell?Universit? e della Ricerca

Publisher

American Chemical Society (ACS)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.acs.org/doi/pdf/10.1021/acsomega.8b02836

Reference30 articles.

1. High-κ gate dielectrics: Current status and materials properties considerations

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4. Atomic Layer Deposition for Graphene Device Integration

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