Thermally stable Ti/Al-based ohmic contacts to N-polar n-GaN by using an indium interlayer
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/55/i=3/a=031001/pdf
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2. Change of Phase Transition Temperature in Band Engineered Ferroelectric Lanthanum-Modified Bismuth Titanates;Journal of Nanoscience and Nanotechnology;2020-11-01
3. Insight into the Al/N-GaN barrier property to realize high quality n-type Ohmic contact;Journal of Alloys and Compounds;2020-03
4. Ion Sputter Induced Interfacial Reaction in Prototypical Metal-GaN System;Scientific Reports;2018-06-04
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