High voltage trapping effects in GaN-based metal–insulator–semiconductor transistors-Reference-Cited by-同舟云学术

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High voltage trapping effects in GaN-based metal–insulator–semiconductor transistors

Published:2015-11-10 Issue:1S Volume:55 Page:01AD04
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Meneghesso Gaudenzio,Meneghini Matteo,Silvestri Riccardo,Vanmeerbeek Piet,Moens Peter,Zanoni Enrico

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference31 articles.

1. Enhancement-mode AlGaN/GaN HEMT and MIS-HEMT technology

2. An assessment of wide bandgap semiconductors for power devices

3. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs

4. Suppression of Dynamic On-Resistance Increase and Gate Charge Measurements in High-Voltage GaN-HEMTs With Optimized Field-Plate Structure

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Robust Al0.23Ga0.77N channel HFETs on bulk AlN for high voltage power electronics;e-Prime - Advances in Electrical Engineering, Electronics and Energy;2023-09

2. A Reconfigurable Setup for the On-Wafer Characterization of the Dynamic RON of 600 V GaN Switches at Variable Operating Regimes;Electronics;2023-02-20

3. Characterization of the Dynamic RON of 600 V GaN Switches under Operating Conditions;Electronics;2023-02-13

4. Novel High Voltage Bias Temperature Instabilities (HV-BTI) setup to monitor R_ON/V_TH drift on GaN-on-Si E-mode MOSc-HEMTs under drain voltage;2022 IEEE International Reliability Physics Symposium (IRPS);2022-03

5. Partial Recovery of Dynamic R ON Versus OFF-State Stress Voltage in p-GaN Gate AlGaN/GaN Power HEMTs;IEEE Transactions on Electron Devices;2021-10

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