Affiliation:
1. Department of Electrical, Electronic, and Information Engineering “Guglielmo Marconi”, University of Bologna, 40136 Bologna, Italy
Abstract
Charge-trapping mechanisms observed in high-voltage GaN switches are responsible for the degradation of power converter efficiency due to modulation of the effective dynamic ON-resistance (RON) with respect to its static value. Dynamic RON degradation is typically dependent on the blocking voltage and the commutation frequency and is particularly significant in new technologies under development. The possibility to characterize this phenomenon on GaN switch samples directly on-wafer, under controlled operating conditions that resemble real operations of the DUT in a switching mode power converter is extremely valuable in the development phase of new technologies or for quality verification of production wafers. In this paper, we describe a setup that allows this characterization: dynamic RON degradation of on-wafer 600 V GaN switches is characterized as a function of the VDS blocking voltage, the VGS driving voltage, and at different temperatures. The dependency on the switching frequency is identified by measuring the current recovery of the switch after the application of blocking voltages of different durations.
Subject
Electrical and Electronic Engineering,Computer Networks and Communications,Hardware and Architecture,Signal Processing,Control and Systems Engineering
Reference28 articles.
1. Power-switching applications beyond silicon: Status and future prospects of SiC and GaN devices;Dimitrijev;MRS Bull.,2015
2. Current Status and Emerging Trends in Wide Bandgap (WBG) Semiconductor Power Switching Devices;Shenai;ECS J. Solid State Sci. Technol.,2013
3. Rupp, R., Laska, T., Häberlen, O., and Treu, M. (2014, January 15–17). Application specific trade-offs for WBG SiC, GaN and high end Si power switch technologies. Proceedings of the 2014 IEEE International Electron Devices Meeting, San Francisco, CA, USA.
4. Wide-Bandgap Power Semiconductors for Electric Vehicle Systems: Challenges and Trends;Li;IEEE Veh. Technol. Mag.,2021
5. Wide Bandgap Devices in Electric Vehicle Converters: A Performance Survey;Abdelrahman;Can. J. Electr. Comput. Eng.,2018
Cited by
5 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献