Method to predict length dependency of negative bias temperature instability degradation in p-MOSFETs-Reference-Cited by-同舟云学术

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Method to predict length dependency of negative bias temperature instability degradation in p-MOSFETs

Published:2016-06-30 Issue:8S2 Volume:55 Page:08PD03
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Seo Ji-Hoon,Kim Gang-Jun,Son Donghee,Lee Nam-Hyun,Kang Yongha,Kang Bongkoo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/55/i=8S2/a=08PD03/pdf

Reference37 articles.

1. An Experimental Perspective of Trap Generation Under BTI Stress

2. Two-component model for long-term prediction of threshold voltage shifts in SiC MOSFETs under negative bias stress

3. Gate Stack Reliability of MOSFETs With High-Mobility Channel Materials: Bias Temperature Instability

4. Statistical analysis of relationship between negative-bias temperature instability and random telegraph noise in small p-channel metal–oxide–semiconductor field-effect transistors

5. Integral impact of BTI and voltage temperature variation on SRAM sense amplifier

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1. Capacitance-Voltage Method for Detecting the local oxide trapped charge in SOI FinFET;2022 International Conference on Information Science and Communications Technologies (ICISCT);2022-09-28

2. Capacitance Method for Identifying Degradation due to Electrical Stress in MOSFETs;e-Journal of Surface Science and Nanotechnology;2022-07-07

3. Dependence of short channel length on negative/positive bias temperature instability (NBTI/PBTI) for 3D FinFET devices;Chinese Physics B;2022-01-01

4. Lateral Capacitance–Voltage Method of NanoMOSFET for Detecting the Hot Carrier Injection;Applied Sciences;2020-11-09

5. Method to estimate profile of threshold voltage degradation in MOSFETs due to electrical stress;Microelectronics Reliability;2018-09

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