The interface analysis of GaN grown on 0° off 6H-SiC with an ultra-thin buffer layer-Reference-Cited by-同舟云学术

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The interface analysis of GaN grown on 0° off 6H-SiC with an ultra-thin buffer layer

Published:2015-12-04 Issue:1 Volume:55 Page:010303
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Sun Zheng,Ohta Akio,Miyazaki Seiichi,Nagamatsu Kentaro,Lee Hojun,Olsson Marc,Ye Zheng,Deki Manato,Honda Yoshio,Amano Hiroshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference27 articles.

1. High-power AlGaN/GaN HEMTs for Ka-band applications

2. GaN HFET for W-band Power Applications

3. AlGaN/GaN HEMT With 300-GHz $f_{\max}$

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhanced Thermal Boundary Conductance across GaN/SiC Interfaces with AlN Transition Layers;ACS Applied Materials & Interfaces;2024-02-05

2. High quality GaN-on-SiC with low thermal boundary resistance by employing an ultrathin AlGaN buffer layer;Applied Physics Letters;2021-02-01

3. A-plane GaN growth on (11-20) 4H-SiC substrate with an ultrathin interlayer;Journal of Crystal Growth;2017-06

4. Preflow trimethylaluminum treatment effect on GaN growth on SiC with an ultrathin interlayer;Japanese Journal of Applied Physics;2016-04-14

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