GaN HFET for W-band Power Applications-Reference-Cited by-同舟云学术

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GaN HFET for W-band Power Applications

Published:2006-12 Issue: Volume: Page:
ISSN:
Container-title:2006 International Electron Devices Meeting
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Author:

Micovic M.,Kurdoghlian A.,Hashimoto P.,Hu M.,Antcliffe M.,Willadsen P. J.,Wong W. S.,Bowen R.,Milosavljevic I.,Schmitz A.,Wetzel M.,Chow D. H.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4154162/4139311/04154221.pdf?arnumber=4154221

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Adaptable 40 nm GaN T-Gate MMIC Processes for Millimeter-Wave Applications;2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2023-10-16

2. First Demonstration of Four-Finger N-polar GaN HEMT Exhibiting Record 712-mW Output Power With 31.7% PAE at 94 GHz;IEEE Microwave and Wireless Technology Letters;2023-06

3. GaN SLCFET Technology for Next Generation mmW Systems, Demonstrating P _out of 10.87 W/mm With 43% PAE at 94 GHz;IEEE Microwave and Wireless Technology Letters;2023-06

4. W-Band Graded-Channel GaN HEMTs With Record 45% Power-Added-Efficiency at 94 GHz;IEEE Microwave and Wireless Technology Letters;2023-02

5. A Literature Review of HEMT for Low Noise and High-Frequency Applications: Current Status and Technology Comparison;2022 IEEE 11th International Conference on Communication Systems and Network Technologies (CSNT);2022-04-23

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