Feasibility study of detection of dielectric breakdown of gate oxide film by using acoustic emission method
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/55/i=12/a=128001/pdf
Reference19 articles.
1. A study of dielectric breakdown mechanism through the statistical analysis of post-breakdown resistance of thin SiO2 films
2. Dielectric breakdown mechanism of thin-SiO/sub 2/ studied by the post-breakdown resistance statistics
3. Dielectric breakdown mechanisms in gate oxides
4. Defect production, degradation, and breakdown of silicon dioxide films
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