A study of dielectric breakdown mechanism through the statistical analysis of post-breakdown resistance of thin SiO2 films-Reference-Cited by-同舟云学术

A study of dielectric breakdown mechanism through the statistical analysis of post-breakdown resistance of thin SiO2 films

Published:2000-01 Issue:3 Volume:1 Page:181-186
ISSN:1468-6996
Container-title:Science and Technology of Advanced Materials
language:en
Short-container-title:Science and Technology of Advanced Materials

Author:

Toriumi A.¹,Satake H.²

Affiliation:

1. aDepartment of Materials Science, Graduate School of Engineering, The University of Tokyo, 7-3-1, Hong, Tokyo, 113-8656, Japan

2. Advanced LSI Technology Laboratory, Corporate Research and Development Center, TOSHIBA Corporation, 1, Komukai Toshiba-cho, Kawasaki, 212-8582, Japan

Publisher

Informa UK Limited

Subject

General Materials Science

Link

https://www.tandfonline.com/doi/pdf/10.1016/S1468-6996%2800%2900015-2

Reference10 articles.

1. Soft breakdown of ultra-thin gate oxide layers

2. After-breakdown conduction through ultrathin SiO2 films in metal/insulator/semiconductor structures

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