Electrically pumped room-temperature operation of GaAs1−xBixlaser diodes with low-temperature dependence of oscillation wavelength
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/7/i=8/a=082101/pdf
Reference21 articles.
1. Temperature Dependence of GaAs1-xBixBand Gap Studied by Photoreflectance Spectroscopy
2. Molecular-beam epitaxy and characteristics of GaNyAs1−x−yBix
3. Band gap of GaAs1−xBix, 0
4. Optical and electrical characterization of InGaBiAs for use as a mid-infrared optoelectronic material
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