Growth of GaSb and AlSb quantum dots on high-index GaAs substrates
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/7/i=5/a=055502/pdf
Reference28 articles.
1. InAs quantum dots onGaAs(2¯5¯11¯)B: STM and photoluminescence studies
2. Formation of self-assembled InAs quantum dots on (110) GaAs substrates
3. Long-range ordered self-assembled InAs quantum dots epitaxially grown on (110) GaAs
4. Self-assembled InAs islands on GaAs(1̄1̄1̄) substrates
5. Formation of self-assembled InGaAs quantum dot arrays aligned along quasiperiodic multiatomic steps on vicinal (111)B GaAs
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1. Effects of In composition on the surface morphology of self-assembled In x Ga1−x Sb/GaAs quantum dots;Japanese Journal of Applied Physics;2022-05-25
2. Effects of electrostatic environment on the electrically triggered production of entangled photon pairs from droplet epitaxial quantum dots;Scientific Reports;2019-02-07
3. Dependence of optimum V/III ratio on substrate orientation, and influence of buffer layer on MOVPE grown InSb/GaSb quantum dots;Journal of Crystal Growth;2019-02
4. Strain Relaxation in GaSb/GaAs(111)A Heteroepitaxy Using Thin InAs Interlayers;ACS Omega;2018-11-16
5. Dynamical properties and charge accumulation in solar cells with embedded GaSb quantum dots;Japanese Journal of Applied Physics;2018-07-24
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