Attenuated phase-shift mask for mitigation of photon shot noise effect in contact hole pattern for extreme ultraviolet lithography
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/7/i=9/a=096502/pdf
Reference21 articles.
1. Sub-hundred Watt operation demonstration of HVM LPP-EUV source
2. Lithography at EUV wavelengths
3. Effects of mask absorber structures on the extreme ultraviolet lithography
4. Shot noise, LER, and quantum efficiency of EUV photoresists
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Multiscale simulations for exploring photo-chemical processes to mitigate the critical dimension variability of contact holes in EUV lithography;Journal of Materials Chemistry C;2021
2. Mask Materials and Designs for Extreme Ultra Violet Lithography;Electronic Materials Letters;2018-03-21
3. Solution-processed resistive switching memory devices based on hybrid organic–inorganic materials and composites;Physical Chemistry Chemical Physics;2018
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