Strain relaxation of Si0.75Ge0.25in hydrogen-implanted Si0.75Ge0.25/B-doped Si0.70Ge0.30/Si heterostructure-Reference-Cited by-同舟云学术

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Strain relaxation of Si0.75Ge0.25in hydrogen-implanted Si0.75Ge0.25/B-doped Si0.70Ge0.30/Si heterostructure

Published:2014-05-22 Issue:6 Volume:7 Page:061302
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Chen Da,Xue Zhongying,Wang Gang,Guo Qinglei,Liu Linjie,Zhang Miao,Liu Su,Wei Xing

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/7/i=6/a=061302/pdf

Reference21 articles.

1. Extremely high electron mobility in Si/GexSi1−xstructures grown by molecular beam epitaxy

2. Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors

3. Relaxed GexSi1−x structures for III–V integration with Si and high mobility two-dimensional electron gases in Si

4. Characterization of strained Si/Si1−xGex/Si heterostructures annealed in oxygen or argon

5. Film thickness constraints for manufacturable strained silicon CMOS

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Strain engineering and mechanical assembly of silicon/germanium nanomembranes;Materials Science and Engineering: R: Reports;2018-06

2. The reduction of critical H implantation dose for ion cut by incorporating B-doped SiGe/Si superlattice into Si substrate;Applied Surface Science;2016-11

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