Realization of Maskless Epitaxial Lateral Overgrowth of GaN on 3C-SiC/Si Substrates-Reference-Cited by-同舟云学术

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Realization of Maskless Epitaxial Lateral Overgrowth of GaN on 3C-SiC/Si Substrates

Published:2013-08-01 Issue:8S Volume:52 Page:08JB07
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Fang Hao,Takaya Yoshifumi,Miyake Hideto,Hiramatsu Kazumasa,Oku Hidehiko,Asamura Hidetoshi,Kawamura Keisuke

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference21 articles.

1. Improved Power Device Figure-of-Merit ($4.0\times 10^{8}$ V$^{2}$ $\Omega^{-1}$ cm$^{-2}$) in AlGaN/GaN High-Electron-Mobility Transistors on High-Resistivity 4-in. Si

2. Impact of buffer growth on crystalline quality of GaN grown on Si(111) substrates

3. Correlation of growth stress and structural evolution during metalorganic chemical vapor deposition of GaN on (111) Si

4. GaN growth on 150-mm-diameter (111) Si substrates

5. High quality GaN grown on silicon(111) using a SixNy interlayer by metal-organic vapor phase epitaxy

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Epitaxial growth optimization of AlGaN/GaN high electron mobility transistor structures on 3C-SiC/Si;Journal of Applied Physics;2019-06-21

2. Surface thermal stability of free-standing GaN substrates;Japanese Journal of Applied Physics;2015-12-22

3. Misorientation dependent epilayer tilting and stress distribution in heteroepitaxially grown silicon carbide on silicon (111) substrate;Thin Solid Films;2014-08

4. MOVPE growth of GaN on Si substrate with 3C-SiC buffer layer;Japanese Journal of Applied Physics;2014-04-25

5. Crack-free GaN grown by using maskless epitaxial lateral overgrowth on Si substrate with thin SiC intermediate layer;physica status solidi (a);2014-03-10

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