Crack-free GaN grown by using maskless epitaxial lateral overgrowth on Si substrate with thin SiC intermediate layer-Reference-Cited by-同舟云学术

Crack-free GaN grown by using maskless epitaxial lateral overgrowth on Si substrate with thin SiC intermediate layer

Published:2014-03-10 Issue:4 Volume:211 Page:744-747
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Fang H.¹,Katagiri M.¹,Miyake H.¹,Hiramatsu K.¹,Oku H.²,Asamura H.²,Kawamura K.²

Affiliation:

1. Department of Electrical and Electronic Engineering; Mie University; 1577 Kurima-Machiya Tsu Mie 514-8507 Japan

2. Air Water R&D Co., Ltd.; 4007-3 Azusagawa Matsumoto 390-1701 Japan

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Improved Power Device Figure-of-Merit ($4.0\times 10^{8}$ V$^{2}$ $\Omega^{-1}$ cm$^{-2}$) in AlGaN/GaN High-Electron-Mobility Transistors on High-Resistivity 4-in. Si

2. Impact of buffer growth on crystalline quality of GaN grown on Si(111) substrates

3. Correlation of growth stress and structural evolution during metalorganic chemical vapor deposition of GaN on (111) Si

4. GaN growth on 150-mm-diameter (111) Si substrates

5. High quality GaN grown on silicon(111) using a SixNy interlayer by metal-organic vapor phase epitaxy

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3. Fabrication of crack-free AlN film on sapphire by hydride vapor phase epitaxy using an in situ etching method;Applied Physics Express;2016-03-11