Laser Operation of Nitride Laser Diodes with GaN Well Layer in 340 nm Band
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference22 articles.
1. Anisotropic polarization characteristics of lasing and spontaneous surface and edge emissions from deep-ultraviolet (λ≈240nm) AlGaN multiple-quantum-well lasers
2. Room-Temperature Stimulated Emission from AlN at 214 nm
3. Pseudomorphically Grown Ultraviolet C Photopumped Lasers on Bulk AlN Substrates
4. 365 nm Ultraviolet Laser Diodes Composed of Quaternary AlInGaN Alloy
5. 350.9 nm UV Laser Diode Grown on Low-Dislocation-Density AlGaN
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1. Status of the growth and fabrication of AlGaN-based UV laser diodes for near and mid-UV wavelength;Journal of Materials Research;2021-12-14
2. Recent development of UV-B laser diodes;Japanese Journal of Applied Physics;2021-11-22
3. Analysis of Spontaneous Subpeak Emission from the Guide Layers of the Ultraviolet‐B Laser Diode Structure Containing Composition‐Graded p‐AlGaN Cladding Layers;physica status solidi (a);2020-01-24
4. Light confinement and high current density in UVB laser diode structure using Al composition-graded p-AlGaN cladding layer;Applied Physics Letters;2019-05-13
5. Electrical properties of relaxed p-GaN/p-AlGaN superlattices and their application in ultraviolet-B light-emitting devices;Japanese Journal of Applied Physics;2019-05-08
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