Effect of Sn atoms on incorporation of vacancies in epitaxial Ge1−xSnxfilm grown at low temperature-Reference-Cited by-同舟云学术

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Effect of Sn atoms on incorporation of vacancies in epitaxial Ge1−xSnxfilm grown at low temperature

Published:2014-01-22 Issue:2 Volume:7 Page:021302
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Kamiyama Eiji,Nakagawa Satoko,Sueoka Koji,Ohmura Takuma,Asano Takanori,Nakatsuka Osamu,Taoka Noriyuki,Zaima Shigeaki,Izunome Koji,Kashima Kazuhiko

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/7/i=2/a=021302/pdf

Reference19 articles.

1. Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors

2. Possibility of increased mobility in Ge-Sn alloy system

3. Electronic structure of SnxGe1−x alloys for small Sn compositions: Unusual structural and electronic properties

4. Low temperature growth of Ge1−Sn buffer layers for tensile–strained Ge layers

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thermoelectric power factor of Ge1-Sn thin films;Materialia;2020-12

2. Vacancy complexes in nonequilibrium germanium-tin semiconductors;Applied Physics Letters;2019-06-24

3. Schottky barrier tuning via dopant segregation in NiGeSn-GeSn contacts;Journal of Applied Physics;2017-05-28

4. Correlation of Bandgap Reduction with Inversion Response in (Si)GeSn/High-k/Metal Stacks;ACS Applied Materials & Interfaces;2017-03-02

5. Systematic Density Functional Theory Investigation of Stability of Dopant Atoms in Ge Ultra-Thin Film Grown on Si Substrate;ECS Journal of Solid State Science and Technology;2017

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