Selective switching of GaN polarity on Ga-polar GaN using atomic layer deposited Al2O3
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/7/i=2/a=025502/pdf
Reference20 articles.
1. Wet etching of GaN, AlN, and SiC: a review
2. Development of periodically oriented gallium nitride for non-linear optics [Invited]
3. The mechanism for polarity inversion of GaN via a thin AlN layer: Direct experimental evidence
4. Theory of doping and defects in III–V nitrides
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