1900 V, 1.6 mΩ cm2AlN/GaN-on-Si power devices realized by local substrate removal-Reference-Cited by-同舟云学术

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1900 V, 1.6 mΩ cm2AlN/GaN-on-Si power devices realized by local substrate removal

Published:2014-02-14 Issue:3 Volume:7 Page:034103
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Herbecq Nicolas,Roch-Jeune Isabelle,Rolland Nathalie,Visalli Domenica,Derluyn Joff,Degroote Stefan,Germain Marianne,Medjdoub Farid

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/7/i=3/a=034103/pdf

Reference19 articles.

1. High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates

2. The Effect of an Fe-doped GaN Buffer on off-State Breakdown Characteristics in AlGaN/GaN HEMTs on Si Substrate

3. Blocking-voltage boosting technology for GaN transistors by widening depletion layer in Si substrates

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1. Artificial Neural Network-Based Approach to Modeling Energy Bands of GaN-Based Heterojunction Materials;2023 International Conference on High Performance Big Data and Intelligent Systems (HDIS);2023-12-06

2. A review of GaN RF devices and power amplifiers for 5G communication applications;Fundamental Research;2023-11

3. Normally-off AlN/GaN HEMTs with a DIBL of 1.15 mV/V for RF Applications;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18

4. Investigation of Isolation Approaches and the Stoichiometry of SiN _x Passivation Layers in “Buffer‐Free” AlGaN/GaN Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors;physica status solidi (a);2022-12-11

5. GaN-Based Lateral and Vertical Devices;Springer Handbook of Semiconductor Devices;2022-11-11

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