Investigation of Isolation Approaches and the Stoichiometry of SiN <sub> <i>x</i> </sub> Passivation Layers in “Buffer‐Free” AlGaN/GaN Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors-Reference-Cited by-同舟云学术

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Investigation of Isolation Approaches and the Stoichiometry of SiN _x Passivation Layers in “Buffer‐Free” AlGaN/GaN Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors

Published:2022-12-11 Issue:8 Volume:220 Page:
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Physica Status Solidi (a)

Author:

Hult Björn¹^ORCID,Thorsell Mattias¹^ORCID,Chen Jr-Tai²^ORCID,Rorsman Niklas¹^ORCID

Affiliation:

1. Department of Microtechnology and Nanoscience Chalmers University of Technology Kemivägen 9 412 96 Gothenburg Sweden

2. SweGaN AB 583 30 Linköping Sweden

Funder

VINNOVA

Stiftelsen för Strategisk Forskning

Vinnova

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202200533

Reference29 articles.

1. Review of GaN HEMT Applications in Power Converters over 500 W

2. Buffer breakdown in GaN-on-Si HEMTs: A comprehensive study based on a sequential growth experiment

3. Buffer Thickness Contribution to Suppress Vertical Leakage Current With High Breakdown Field (2.3 MV/cm) for GaN on Si

4. On the nitrogen vacancy in GaN

5. Substitutional and interstitial oxygen in wurtzite GaN

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