Effects of post-metal annealing on the electrical characteristics of HfOx-based resistive switching memory devices-Reference-Cited by-同舟云学术

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Effects of post-metal annealing on the electrical characteristics of HfOx-based resistive switching memory devices

Published:2017-05-11 Issue:6S1 Volume:56 Page:06GF10
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Chuang Kai-Chi,Lin Kuan-Yu,Luo Jun-Dao,Li Wei-Shuo,Li Yi-Shao,Chu Chi-Yan,Cheng Huang-Chung

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/56/i=6S1/a=06GF10/pdf

Reference32 articles.

1. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

2. Metal–Oxide RRAM

3. Fast-Write Resistive RAM (RRAM) for Embedded Applications

4. Physical and chemical mechanisms in oxide-based resistance random access memory

5. Understanding the resistive switching characteristics and mechanism in active SiOx-based resistive switching memory

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1. Ti/HfO2-Based RRAM with Superior Thermal Stability Based on Self-Limited TiOx;Electronics;2023-05-26

2. Performance Optimization of Atomic Layer Deposited HfO_x Memristor by Annealing With Back-End-of-Line Compatibility;IEEE Electron Device Letters;2022-07

3. Effects of Ambient and Annealing Temperature in HfO₂ Based RRAM Device Modeling and Circuit-Level Implementation;ECS Journal of Solid State Science and Technology;2022-02-01

4. Analysis of the Thermal Degradation Effect on a HfO2-Based Memristor Synapse Caused by Oxygen Affinity of a Top Electrode Metal and on a Neuromorphic System;ACS Applied Electronic Materials;2021-12-15

5. Electroforming Atmospheric Temperature and Annealing Effects on Pt/HfO2/TiO2/HfO2/Pt Resistive Random Access Memory Cell;Silicon;2021-03-25

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