Perspective analysis of tri gate germanium tunneling field-effect transistor with dopant segregation region at source/drain
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/56/i=4S/a=04CD18/pdf
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1. MOSFET performance scaling: Limitations and future options
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3. On the scaling limit of ultrathin SOI MOSFETs
4. Single electron switching events in nanometer-scale Si MOSFET's
5. Corrections to “Suppression of Drain-Induced Barrier Lowering in Silicon-on-Insulator MOSFETs Through Source/Drain Engineering for Low-Operating-Power System-on-Chip Applications” [Jan 13 260-267]
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