An evaluation method of the profile of plasma-induced defects based on capacitance–voltage measurement
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/56/i=6S2/a=06HD04/pdf
Reference47 articles.
1. Quantitative and comparative characterizations of plasma process-induced damage in advanced metal-oxide-semiconductor devices
2. Dry etching damage of silicon: A review
3. Reduction of silicon recess caused by plasma oxidation during high-density plasma polysilicon gate etching
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Predicting the effects of plasma-induced damage on p–n junction leakage and its application in the characterization of defect distribution;Journal of Vacuum Science & Technology B;2022-12
2. Investigation of spatial and energy profiles of plasma process-induced latent defects in Si substrate using capacitance–voltage characteristics;Journal of Physics D: Applied Physics;2019-07-25
3. Incident ion dose evolution of damaged layer thickness in Si substrate exposed to Ar and He plasmas;Japanese Journal of Applied Physics;2018-05-29
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