Benefit of precise control of surface reaction by new patterning technique for small-contact etching with TiN hard mask
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/56/i=6S2/a=06HB08/pdf
Reference30 articles.
1. Fluorocarbon assisted atomic layer etching of SiO2 using cyclic Ar/C4F8 plasma
2. Plasma atomic layer etching using conventional plasma equipment
3. Fluorocarbon based atomic layer etching of Si3N4 and etching selectivity of SiO2 over Si3N4
4. Quasi-atomic layer etching of silicon nitride
5. Sub-0.1 μm nitride hard mask open process without precuring the ArF photoresist
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