A method for high selective etch of Si3N4 and SiC with ion modification and chemical removal

Author:

Kumakura Sho,Tabata Masahiro,Honda Masanobu

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Dry Process;Japanese Journal of Applied Physics;2023-05-16

2. Study of Silicon Nitride Etched by Cyclic Atomic Layer Etching;2022 IET International Conference on Engineering Technologies and Applications (IET-ICETA);2022-10-14

3. Dry Process;Japanese Journal of Applied Physics;2022-06-13

4. Importance of higher‐level excited species in argon remote plasma sources: Numerical modeling with consideration of detailed chemical reaction pathways;Plasma Processes and Polymers;2022-03-24

5. New innovative etch technologies utilizing state-of-the-art atomic-level process for advanced patterning;2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2022-03-06

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