Electron microscopy studies of the intermediate layers at the SiO2/GaN interface-Reference-Cited by-同舟云学术

Electron microscopy studies of the intermediate layers at the SiO2/GaN interface

Published:2017-10-23 Issue:11 Volume:56 Page:110312
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Mitsuishi Kazutaka^ORCID,Kimoto Koji,Irokawa Yoshihiro,Suzuki Taku,Yuge Kazuya,Nabatame Toshihide,Takashima Shinya,Ueno Katsunori,Edo Masaharu,Nakagawa Kiyokazu,Koide Yasuo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/56/i=11/a=110312/pdf

Reference25 articles.

1. State-of-the-art GaN vertical power devices

2. 1.7 kV/1.0 mΩcm2normally-off vertical GaN transistor on GaN substrate with regrown p-GaN/AlGaN/GaN semipolar gate structure

3. Low interface trap density for remote plasma deposited SiO2 on n‐type GaN

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