Positive bias temperature instability of SiC-MOSFETs induced by gate-switching operation
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/56/i=4S/a=04CR11/pdf
Reference30 articles.
1. Fundamentals of Silicon Carbide Technology
2. Threshold-voltage instability in 4H-SiC MOSFETs with nitrided gate oxide revealed by non-relaxation method
3. Bias Temperature Instability for Devices and Circuits
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